Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

摘要

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose/sup 0.47/ variation. The possible origin of the negative charge trapping is discussed.