Radiation-Induced Charge Trapping in Low-kappa Silsesquioxane-Based Intermetal Dielectric Films

摘要

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose (question mark)sup 0.47(exclamation point) variation. The possible origin of the negative charge trapping is discussed.