Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

摘要

This paper presents an investigation of the impact of single-event transients (SETs) and total ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation, 90-nm SiGe BiCMOS technology. A first-order uncompensated bandgap reference (BGR) circuit is used to benchmark the SET and TID responses of these voltage reference circuits (VRCs). Based on the first-order BGR radiation response, new circuit-level radiation-hardening-by-design (RHBD) techniques are proposed. An RHBD technique using inverse-mode (IM) transistors is demonstrated in a BGR circuit. In addition, a PIN diode VRC is presented as a potential SET and TID tolerant, circuit-level RHBD alternative.