Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

摘要

Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2 based MOSFETs and SiC/SiO2 based MOSFETs.