C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

机译：通过电检测磁共振研究的4H-SIC MOSFET中的C脸界面缺陷

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This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(0001) "C face" MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO_2 structures.

机译：本文在4H-SiC（0001）“C面”MOSFET上报道了EDMR（电检测磁共振）观察。我们在湿氧化的C面4H-SiC MOSFET中发现了一种新的强大EDMR信号，该MOSFET起源于C面上SiC-SiO_2结构上的内在界面缺陷。

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《Conference on Silicon Carbide and Related Materials》|2014年||共4页
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T. Umeda; M. Okamoto; R. Arai; Y. Satoh; R. Kosugi; S. Harada; H. Okumura; T. Makino; T. Ohshima;
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中图分类 TN304.1-532;
关键词
4H-SiC MOSFET; C face interface; EDMR; interface defect; threshold voltage; deep interface-state density;

机译：4H-SIC MOSFET;C面界面;EDMR;界面缺陷;阈值电压;深界面 - 状态密度;

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专利

1. C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance [J] . T. Umeda, M. Okamoto, R. Arai, Materials science forum . 2014,第pta1期

机译：通过电检测磁共振研究4H-SiC MOSFET中的C面界面缺陷
2. Relationship between C-face defects and threshold-voltage instability in C-face 4H-SiC MOSFETs studied by electrically detected magnetic resonance [J] . G. W. Kim, R. Arai, S. J. Ma, Materials science forum . 2016,第期

机译：电检测磁共振研究C面4H-SiC MOSFET中C面缺陷与阈值电压不稳定性之间的关系
3. Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance [J] . Yohei Kagoyama, Mitsuo Okamoto, Shinsuke Harada, Materials science forum . 2016,第期

机译：电检测磁共振研究C面4H-SiC MOSFFET干式和湿式氧化的微观差异
4. C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance [C] . T. Umeda, M. Okamoto, R. Arai, Conference on Silicon Carbide and Related Materials . 2014

机译：通过电检测磁共振研究的4H-SIC MOSFET中的C脸界面缺陷
5. Development of new atomic scale defect identification schemes in micro / nanoelectronics incorporating digital signal processing methods for investigating zero/low field spin dependent transport and passage effects in electrically detected magnetic resonance. [D] . Cochrane, Corey J. 2013

机译：结合数字信号处理方法的微/纳米电子学中新的原子尺度缺陷识别方案的开发，用于研究电检测磁共振中零/低场自旋相关的传输和通过效应。
6. Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance [O] . D. J. McCrory, P. M. Lenahan, D. M. Nminibapiel, -1

机译：通过电检测磁共振研究TiN / Ti / HfO2 / TiN电阻性随机存取存储器的总电离剂量效应
7. Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations [O] . J. Cottom, G. Gruber, G. Pobegen, 2018

机译：通过电检测的磁共振和AB Initio计算研究了4H-SiC / SiO2界面处的重组缺陷
8. Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules [R] . Scofield, J., Merrett, N., Richmond, J., 2009

机译：基于1200 V，100 a，200°C，4H-siC mOsFET的电源开关模块的电气和热性能

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

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