Single-Event Transient Space Characterizations in 28-nm UTBB SOI Technologies and Below

摘要

In this article, we present a study of single-event transients (SETs) through an integrated test vehicle. This block was designed and manufactured within two test-chips in 28- and 22-nm fully depleted silicon-on-insulator (FDSOI) advanced technologies. Radiation testing was performed on those test chips in order to characterize SETs. The results are cross-coupled with Monte Carlo simulations and discussed.