首页> 外文期刊>Nanotechnology, IEEE Transactions on >A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits
【24h】

A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits

机译:基于忆阻器的纵横制电路的新型设计和建模范例

获取原文
获取原文并翻译 | 示例

摘要

Over 30 years ago L. Chua proposed the existence of a new class of passive circuit elements, which he called memristors and memristive devices. The unique electrical characteristics associated with them, along with the advantages of crossbar structures, have the potential to revolutionize computing architectures. A well-defined and effective memristor model for circuit design combined with a design paradigm based on well-understood underlying logic design principles would certainly accelerate research on nanoscale circuits and systems. Toward this goal, we propose a memristor crossbar circuit design paradigm in which memristors are modeled using the quantum mechanical phenomenon of tunneling. We use this circuit model to design and simulate various logic circuit designs capable of universal computation. Finally, we develop and present a new design paradigm for memristor-based crossbar circuits.
机译:30年前,L。Chua提出了一种新型的无源电路元件,他将其称为忆阻器和忆阻器件。与它们相关的独特的电气特性,以及交叉开关结构的优点,具有革新计算架构的潜力。一个明确的,有效的用于电路设计的忆阻器模型,再结合基于众所周知的底层逻辑设计原理的设计范例,无疑会加速对纳米级电路和系统的研究。为了实现这一目标,我们提出了一种忆阻器交叉开关电路设计范例,其中利用隧穿的量子力学现象对忆阻器进行建模。我们使用该电路模型来设计和仿真能够通用计算的各种逻辑电路设计。最后,我们为基于忆阻器的纵横制电路开发并提出了一种新的设计范例。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号