Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics

摘要

In this letter, we report on the fabrication and characterization of titanium dioxide ( ${rm TiO}_2$)-based resistive RAM (ReRAM) cointegration with $380, mu {rm m}$-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of ${rm Pt/TiO_2/Pt}$ thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of ${rm Pt/TiO_2/Pt}$ or ${rm Pt/TiO_2}$ memory cells on ${rm 140}$ and $60, mu {rm m}$ diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.