A large-signal HSPICE model for the heterojunction bipolar transistor

摘要

The development of an accurate nonlinear HSPICE model for a 3-*10- mu m/sup 2/ heterojunction bipolar transistor (HBT) is described. The model allows the simulation of nonlinear measurements such as gain at the 1-dB compression point (P/sub 1/ /sub dB/) and third-order intercept point. Experimental data characterizing an HBT at 12.5 GHz are presented, demonstrating the validity of the model for MMIC chip designs.