Extraction of device noise sources from measured data using circuit simulator software

摘要

A procedure is presented for extracting the properties of device noise sources from experimental data. The extraction procedure can be implemented using commercially available circuit simulators. An example concerning a low-noise pseudomorphic high-electron-mobility transistor (HEMT) shows that the two noise sources extracted from experimental data are largely uncorrelated provided that parasitic elements are de-embedded from the measurement and that the sources are extracted in H-parameter format.