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Circuit-Based Characterization of Device Noise Using Phase Noise Data

机译:使用相位噪声数据的基于电路的器件噪声表征

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A circuit-based device noise characterization technique is introduced which uses phase noise data to estimate the power spectral density (PSD) of high-frequency noise in MOSFETs. To apply this technique to a typical CMOS process, an oscillator structure is introduced which provides a predictable phase noise level for a given device noise PSD. The analytical equations governing the phase noise of this oscillator are presented and subsequently verified using circuit simulations. Three oscillators, using transistors of various channel lengths, are fabricated in a commercial 0.18 $mu{hbox{m}}$ CMOS process technology to study short-channel excess noise. It is shown that, at equal current levels, the noise PSD in minimum-channel-length transistors is 8.7 dB larger than that in 3$times$ -minimum-channel-length devices. The proposed method is especially suitable for applying to a state-of-the-art CMOS process to provide a quantitative analysis of various noise tradeoffs which are sometimes missing in foundry-provided models.
机译:引入了一种基于电路的器件噪声表征技术,该技术使用相位噪声数据来估计MOSFET中高频噪声的功率谱密度(PSD)。为了将该技术应用于典型的CMOS工艺,引入了一种振荡器结构,该结构为给定的器件噪声PSD提供了可预测的相位噪声电平。提出了控制该振荡器相位噪声的解析方程,随后使用电路仿真对其进行了验证。在商用0.18μmCMOS工艺技术中制造了使用各种沟道长度的晶体管的三个振荡器,以研究短沟道的过量噪声。结果表明,在相同的电流水平下,最小沟道长度晶体管的噪声PSD比3倍最小沟道长度器件的噪声PSD大8.7 dB。所提出的方法特别适合应用于最新的CMOS工艺,以定量分析各种噪声权衡,而这些噪声权衡有时在代工厂提供的模型中会丢失。

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