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Experimental analysis of millimeter wave coplanar waveguide slow wave structures on GaAs

机译:GaAs上毫米波共面波导慢波结构的实验分析

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Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given.
机译:实验研究了适用于行波电光调制器的微波共面波导慢波结构,频率达到40 GHz。通过在接地平面中引入周期性缝隙来实现速度减慢。研究了半绝缘GaAs衬底上和通过分子束外延在半绝缘GaAs衬底上生长的外延层上的结构。在测量中,使用了通过反射线的校准方法,并讨论了其局限性。这些线的特性阻抗,相速度和损耗系数是从测量的S参数中提取的。呈现并讨论了各种尺寸对这些线特性的影响。结果表明,使用这种方法可以在不分散至少40 GHz的情况下显着降低相速度。在半绝缘GaAs衬底和专门设计的外延层上都是如此。给出了一种实现指定相速度和特性阻抗的设计方法。

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