Coplanar slow-wave waveguide structures on a chip with a through-plated hole by means of silicon, production process and design structure

摘要

Herein, via structures by means of silicon for coplanar high-performance slow-wave waveguide on a chip, a production process and made available design structures for integrated circuits. The method comprises the form of at least one ground plane layer (25) in a substrate (10) and the form of a signal layer (30) in the substrate in a layer of the same plane as the at least one mass. The method further comprises the form at least a metal-filled through connection by means of silicon (35) between the at least one ground plane layer and the signal layer.