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ON-CHIP SLOW-WAVE THROUGH-SILICON VIA COPLANAR WAVEGUIDE STRUCTURES, METHOD OF MANUFACTURE AND DESIGN STRUCTURE

机译:通过共面波导管结构的芯片上慢波穿透硅,制造方法和设计结构

摘要

On-chip high performance slow-wave coplanar waveguide through-silicon via structures, method of manufacture and design structures for integrated circuits are provided herein. The method includes forming at least one ground plane layer in a substrate and forming a signal layer in the substrate, in a same plane layer as the at least one ground. The method further includes forming at least one metal filled through-silicon via between the at least one ground plane layer and the signal layer.
机译:本文提供了用于集成电路的芯片上高性能慢波共面波导直通硅通孔结构,制造方法和设计结构。该方法包括在基板中形成至少一个接地平面层,并且在与至少一个接地相同的平面层中在基板中形成信号层。该方法还包括在至少一个接地平面层和信号层之间形成至少一个金属填充的贯穿硅通孔。

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