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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Suppression of leakage resonance in coplanar MMIC packages using a Si sub-mount layer
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Suppression of leakage resonance in coplanar MMIC packages using a Si sub-mount layer

机译:使用Si基座层抑制共面MMIC封装中的泄漏共振

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In this paper, we examined the parasitic leakage resonance of coplanar monolithic microwave and millimeter-wave integrated circuits (MMICs) by the finite-difference time-domain calculations and experiments. The results show that leakages from coplanar MMICs become significantly resonant in finite substrates and packaging enclosures. In order to avoid the leakage resonance, a resonance suppression method using a doped-Si sub-mount layer is proposed and experimented in a frequency range from 0.5 to 40 GHz. The resonance suppression scheme is verified by measuring the S-parameters of the fabricated conductor-backed coplanar waveguides having an Si sub-mount layer of different resistivities (1 m/spl Omega//spl middot/cm, 15 /spl Omega//spl middot/cm, and 4 k/spl Omega//spl middot/cm). The leakage resonance can be completely suppressed using the typical 15 /spl Omega//spl middot/cm Si sub-mount layer.
机译:在本文中,我们通过有限差分时域计算和实验研究了共面单片微波和毫米波集成电路(MMIC)的寄生泄漏共振。结果表明,共面MMIC的泄漏在有限的基板和封装外壳中变得明显谐振。为了避免泄漏共振,提出了使用掺杂的Si子安装层的共振抑制方法,并在0.5至40GHz的频率范围内进行了实验。通过测量具有不同电阻率(1 m / spl Omega // spl middot / cm,15 / spl Omega // spl的Si子安装层)的导体支持的共面波导的S参数来验证谐振抑制方案middot / cm和4 k / splΩ// spl middot / cm)。使用典型的15 / spl Omega // spl middot / cm Si子安装层可以完全抑制泄漏共振。

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