A Broadband 900-GHz Silicon Micromachined Two-Anode Frequency Tripler

摘要

The design, fabrication, and measurement are presented for a 900-GHz frequency tripler with silicon micromachined blocks made using deep reactive ion etching. The broadband design results in more than 60 $mu{hbox{W}}$ between 877.5–922.5 GHz and the peak output power of 85.3 $mu{hbox{W}}$ in the frequency response, all measured at room temperature. In power sweep measurement, the tripler delivers the maximum power of 109.3 $mu{hbox{W}}$ at 909 GHz. This is the first demonstration of a frequency tripler using silicon micromachining at these frequencies and suggests that this technology is a viable option for receiver arrays in the terahertz frequency range.