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Silicon micromachined waveguide transitions and three-dimensional lithography for high-frequency packaging.

机译:用于高频封装的硅微加工波导过渡和三维光刻。

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摘要

This thesis presents the measured performance of an integrated waveguide based on micromachined (001) silicon, and a transition coupling the finite ground coplanar transmission line to such an integrated waveguide at W-band frequencies. Through simple modification of this novel transition structure, extension to submillimeter wave frequencies is reasonable. Such waveguides and transitions may find application in submillimeter wave systems including a novel power combining module proposed herein. As proposed, the module incorporates integrated antennas that are compatible with the current fabrication process, a process that utilizes both wet anisotropic etching as well as deep reactive ion etching of silicon.; Three-dimensional lithography, one of the remaining obstacles to fully exploiting the potential of micromachined structures, is also addressed in this thesis. The ability to simultaneously pattern features on the various facets of micromachined silicon is demonstrated and a novel high frequency electronic packaging architecture using micromachined silicon as a substrate material and electrophoretic deposition of photoresist for patterning is presented. The average loss of a finite ground coplanar transmission line transition into a 110 μm deep micromachined cavity is shown to be less than 0.08 dB in the 2–40 GHz frequency range. This multilevel transition may be employed as part of a package used to provide environmental protection for microelectromechanical switches without severely compromising their high-frequency performance.
机译:本论文介绍了基于微机械加工(001)硅的集成波导的测量性能,以及将有限的地面共面传输线以W波段频率耦合到这种集成波导的过渡过程。通过对该新颖过渡结构的简单修改,扩展到亚毫米波频率是合理的。这样的波导和过渡可以在包括本文提出的新颖功率组合模块的亚毫米波系统中找到应用。如所提出的,该模块包括与当前制造工艺兼容的集成天线,该工艺利用了湿法各向异性蚀刻以及硅的深反应离子蚀刻。本文还探讨了三维光刻技术,这是充分利用微机械结构潜力的剩余障碍之一。演示了同时在微机械加工的硅的各个面上构图的能力,并提出了一种新颖的高频电子封装结构,该结构使用微机械加工的硅作为衬底材料,并电泳沉积光刻胶以进行构图。在2–40 GHz频率范围内,有限的地面共面传输线过渡到110μm深的微加工腔中的平均损耗小于0.08 dB。这种多级过渡可用作封装的一部分,该封装用于为微机电开关提供环境保护,而不会严重损害其高频性能。

著录项

  • 作者

    Becker, James Paul.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 188 p.
  • 总页数 188
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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