Layout Optimization of ESD Protection Diodes for High-Frequency I/Os

摘要

Layout options for CMOS ESD diodes' p-n junction geometry and metal routing are investigated in this paper. Experiments are performed using 90- and 180-nm technologies. Using the figures of merit $I_{rm CP}/C$ and $R_{rm ON} ast C$, it is shown that twin-well stripe diodes with nonminimum diffusion width and high-level broadside routing are optimum for gigahertz-frequency I/Os. In addition, the suitability of ESD diodes formed with the isolated P-well/deep N-well diffusions available in triple-well technologies is evaluated for high-speed I/O applications.