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Characterizations of Nanosilver Joints by Rapid Sintering at Low Temperature for Power Electronic Packaging

机译:功率电子封装低温快速烧结纳米银接头的表征

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摘要

Nanosilver paste is a promising lead-free die-attach material suitable for power electronic packaging, particularly for high-temperature applications. Compared with traditional hot pressing to sinter nanosilver, rapid sintering by a pulse current is able to sinter nanosilver in less than a second. To investigate the nanosilver sintering process during rapid sintering, we characterize the temperature field of a nanosilver joint by using an infrared camera. The temperature field is analyzed as a function of current magnitude and current-on time. The relationship between the temperature field and the shear strength of joint is discussed to optimize the rapid sintering parameters. Results show that the joint's temperature–time curve varies with the current-on time. The shear strength can be up to 40 MPa, which is comparable to the robust hot-press sintered joint, when the peak temperature reaches above 400 $^{circ}hbox{C}$. The microstructure of these joints is porous with a particle diameter of $sim$400 nm, and this aids in releasing the internal stresses resulting in higher shear strength.
机译:纳米银浆是一种有前途的无铅芯片连接材料,适用于电力电子封装,尤其是高温应用。与传统的热压烧结纳米银相比,通过脉冲电流进行快速烧结能够在不到一秒钟的时间内烧结纳米银。为了研究快速烧结过程中纳米银的烧结过程,我们通过使用红外热像仪表征了纳米银接头的温度场。将温度场分析为电流大小和通电时间的函数。讨论了温度场与接头抗剪强度之间的关系,以优化快速烧结参数。结果表明,接头的温度-时间曲线随通电时间而变化。当峰值温度达到400℃以上时,剪切强度可以达到40 MPa,这与坚固的热压烧结接头相当。这些接头的微观结构是多孔的,粒径为$ sim $ 400 nm,这有助于释放内部应力,从而提高剪切强度。

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