首页> 外国专利> Method for sintering three-dimensional contour exhibiting semiconductor component for power electronics using low-temperature joining technique, involves applying sintering pressure by upper die with contours of semiconductor component

Method for sintering three-dimensional contour exhibiting semiconductor component for power electronics using low-temperature joining technique, involves applying sintering pressure by upper die with contours of semiconductor component

机译:使用低温接合技术烧结用于电力电子设备的三维轮廓显示半导体组件的方法,包括通过上模向半导体组件的轮廓施加烧结压力

摘要

The method involves applying sintering pressure by an upper die (1) with contours of a semiconductor component (7) against a secondary tool (9) behind a substrate e.g. ceramic metal substrate. The upper die is pressed on thermoplastic material before a sintering process under temperature for performing thermoplastic deformation to form a negative contour on the semiconductor component. A negative contour matching the contours of the semiconductor component is obtained before performing the sintering process by a cutting process. The upper die is made of durotherm(RTM: thermoformed plastic) material and/or metal. An independent claim is also included for a contour-structured press ram for sintering a three-dimensional contour exhibiting semiconductor component.
机译:该方法包括通过具有半导体部件(7)的轮廓的上模具(1)将烧结压力施加到例如在基板之后的辅助工具(9)上。陶瓷金属基板。在烧结过程之前,在一定温度下将上模压在热塑性材料上,以进行热塑性变形,从而在半导体元件上形成负轮廓。在通过切割工艺执行烧结工艺之前,获得与半导体部件的轮廓匹配的负轮廓。上模由durotherm(RTM:热成型塑料)材料和/或金属制成。还包括用于烧结三维轮廓半导体组件的轮廓结构压力机的独立权利要求。

著录项

  • 公开/公告号DE102010020696A1

    专利类型

  • 公开/公告日2011-11-17

    原文格式PDF

  • 申请/专利权人 DANFOSS SILICON POWER GMBH;

    申请/专利号DE20101020696

  • 发明设计人 ERFINDER WIRD SPÄTER GENANNT WERDEN;

    申请日2010-05-17

  • 分类号H01L21/58;H01L21/324;

  • 国家 DE

  • 入库时间 2022-08-21 17:05:34

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