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Design and Analysis of Single-Event Tolerant Slave Latches for Enhanced Scan Delay Testing

机译:用于增强扫描延迟测试的单事件容忍从锁的设计和分析

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The last few years have seen the development and fabrication of nanoscale circuits at high density and low power. Following a single-event upset (SEU), so-called soft errors due to internal and externally induced phenomena (such as $alpha$-particles and cosmic rays in adverse environments) have been reported during system operation; this is especially deleterious for storage elements such as flip-flops. To reduce the impact of a soft error on flip-flops, hardening techniques have been utilized. This paper proposes two new slave latches for improving the SEU tolerance of a flip-flop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. When used in a flip-flop, the first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16% (9%) power consumption overhead at 32-nm feature size, as compared with the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple-node upset.
机译:在过去的几年中,已经看到了高密度和低功率的纳米级电路的开发和制造。在发生单事件扰动(SEU)之后,已经报告了在系统运行期间由于内部和外部诱发的现象(例如$ alpha $粒子和不利环境中的宇宙射线)而导致的所谓软错误;这对于诸如触发器之类的存储元件尤其有害。为了减少软错误对触发器的影响,已经采用了强化技术。本文提出了两个新的从锁存器,以提高扫描延迟测试中触发器的SEU容限。与技术文献中发现的设计相比,提出的两个从锁存器利用附加电路来增加触发器的临界电荷。在触发器中使用时,第一(第二)锁存器设计在32纳米特征尺寸下的临界电荷大5.6(2.4)倍,延迟为11%(4%),功耗开销为16%(9%),与技术文献中的最佳设计相比。此外,显示出,所提出的从锁存器在存在具有多节点翻转的单个事件的情况下也具有优异的性能。

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