Thermomechanical Failure Analysis of Through-Silicon Via Interface Using a Shear-Lag Model With Cohesive Zone

摘要

An analytical approach to predict initiation and growth of interfacial delamination in the through-silicon via structure is developed by combining a cohesive zone model with a shear-lag model. Two critical temperatures are predicted for damage initiation and fracture initiation, respectively. It is found that via extrusion significantly increases beyond the second critical temperature. The dependence of the critical temperatures on the material/interfacial properties, as well as the via size (diameter and height), is discussed. In parallel with the analytical approach, finite-element models with cohesive interface elements are employed to numerically simulate the initiation and the progression of interfacial delamination. The numerical results are in good agreement with the analytical solution, and both are qualitatively consistent with reported experimental findings by others.