PABAM: A Physics-Based Analytical Model to Estimate Bipolar Amplification Effect Induced Collected Charge at Circuit Level

摘要

This paper presents a physics-based analytical model called PABAM. It is performed to estimate the bipolar amplification effect induced collected charge at circuit level. The PABAM is validated by TCAD simulation with different technologies and layout parameters. The collected charge obtained from combining the PABAM and the diffusion-collection model agrees well with TCAD simulation results, both in magnitude and trend. The proposed PABAM is implemented in the circuit-level SER prediction approach to evaluate SEU for twin- and triple-well SRAMs. The simulated cross sections have a good agreement with heavy ion experimental data, particularly for MCU prediction.