Simulation Study of Large-Scale Charge Sharing Mitigation Using Seamless Guard Band

摘要

In this paper, a novel seamless guard band (SGB) technique for charge sharing mitigation is studied using 3-D TCAD numerical simulations. The simulations results in 65-nm twin-well bulk CMOS technology indicate that the SGB technique can not only mitigate the single-event transient pulsewidth greatly but also mitigate the charge sharing between logical nodes or logical cells significantly. The simulation results also indicate that the SGB technique is superior to the conventional guard band (GB) technique, for it is more beneficial for parasitic bipolar effect mitigation. Using SGB technique, the single-event double-transient (SEDT) generation is mitigated completely under low LET particle (LET ≤40 MeV⋅cm2/mg) radiation, and the SEDT pulsewidth is mitigated > 50% even with the LET of 80 MeV⋅cm2/mg, which is > 25% from GB technique. Finally, the SGB technique can be applied to the construction of a radiation-hardened standard cell library conveniently, and its area penalty is 1–1.67 ×, which is the same with that of the GB technique.