机译:金属/ Al2O3 / SiO2 / Si,用于新兴嵌入式存储器的栅叠层的电荷陷阱分析
School of Computing and Electrical Engineering, Indian Institute of Technology Mandi, Mandi, India;
Institute of Semiconductor Electronics, University of Stuttgart, Stuttgart, Germany;
School of Computing and Electrical Engineering, Indian Institute of Technology Mandi, Mandi, India;
Institute of Semiconductor Electronics, University of Stuttgart, Stuttgart, Germany;
School of Computing and Electrical Engineering, Indian Institute of Technology Mandi, Mandi, India;
Institute of Semiconductor Electronics, University of Stuttgart, Stuttgart, Germany;
Logic gates; Charge carrier processes; Aluminum oxide; Temperature measurement; Voltage measurement; Silicon; Capacitance-voltage characteristics;
机译:利用电荷泵技术对SiO2 / Al2O3栅堆叠中的陷阱进行分析
机译:具有SrBi2Ta2O9 / Al2O3 / SiO2堆的金属-铁电绝缘体-半导体结构中的电荷俘获
机译:用于电荷俘获闪存的原子层沉积多层HfO2 / Al2O3堆中的导电和充电机理分析
机译:考虑双向去捕集的SiO2 / HfO2堆叠栅电介质中电荷捕集/捕集机理的研究
机译:电荷陷阱晶体管(CTT):将逻辑晶体管转换为高级高k /金属门CMOS技术的嵌入式非易失性存储器
机译:非易失性存储应用中Al2O3-TiAlO-SiO2栅堆叠的电子结构和电荷俘获特性
机译:射频磁控共溅射制备al2O3 / al族al2O3 / siO2叠层薄膜的电荷俘获特性