High-voltage device modeling for SPICE simulation of HVIC's

摘要

A novel methodology for flexible SPICE implementation of physical models for high-voltage power devices, accounting for their unique characteristics, is presented and demonstrated. The implementation is achieved without modifying the simulator code by utilizing user-defined controlled sources that reference a subroutine that defines the system of model equations. The simultaneous solution of the equations, which describe the integrated charges in the device and the quasistatic terminal currents in the terms of the terminal voltages, is effected by the SPICE2 nodal analysis. The methodology is exemplified by modeling the insulated-gate transistor (IGT). SPICE simulations of DC and transient characteristics of IGT switching circuits are discussed and shown to be representative of measurements. The flexibility of the modeling methodology for high-voltage integrated-circuit (HVIC) CAD is demonstrated by simulating effects of both static and dynamic latch-up in the merged bipolar/MOS structure of the IGT.