Buried-channel MOSFET model for SPICE

摘要

A buried-channel (BC) MOSFET model for DC, transient and small-signal circuit simulation, which has been incorporated into SPICE 3B1, is presented. The model includes all of the modes of operation inherent to the BC-MOSFET, including the partial modes of operation. The equivalent circuit for the BC-MOSFET is presented, and the static, transient, and small-signal equations used for SPICE implementation are systematically described. The surface and bulk mobility models used in the static current-voltage characteristic are highlighted. The charge model and the importance of incorporating all of the models of operation are illustrated. A number of examples are given to illustrate the BC-MOSFET SPICE model. It is shown that the SPICE model for the BC-MOSFET is in good agreement with experimental measurements.