A system for full-chip and critical net parasitic extraction for ULSI interconnects using a fast 3-D field solver

摘要

As integrated circuit (IC) manufacturing technology pushes toward the deep submicron (DSM) regime, the interconnect behavior begins to dominate the overall chip performance. Traditional interconnect characterization methods do not offer the required accuracy or the versatility to tackle challenges of DSM design. We present a system for interconnect parasitic capacitance extraction using an extremely fast three-dimensional (3-D) solver, capable of handling general geometry configurations and providing high accuracy. The contributions in this work make 3-D field solvers an attractive and, for the first time, computationally feasible approach to calculating interconnect parasitics. The system represents a significant performance leap in 3-D interconnect characterization, making it well suited for full-chip extraction and for high-accuracy characterization of critical nets, block IP, and standard and custom cell designs.