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Testing Ternary Content Addressable Memories With Comparison Faults Using March-Like Tests

机译:使用March-Like测试测试具有比较错误的三进制内容可寻址内存

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Ternary content addressable memory (TCAM) plays an important role in various applications for its fast lookup operation. This paper proposes several comparison fault models (i.e., the faults cause Compare operation fail) of TCAMs based on electrical defects, such as shorts between two circuit nodes and transistor stuck-open and stuck-on faults. Two March-like tests for detecting comparison faults are also proposed. The first March-like test requires 4N Write operations, 3N Erase operations, and 4N+2B Compare operations to cover 100% of targeted comparison faults for an NtimesB-bit TCAM with Hit output only. The second March-like test requires 2N Write operations, 2N Erase operations, and 4N+2B Compare operations to cover 100% of targeted comparison faults for an NtimesB-bit TCAM with Hit and Priority Address Encoder outputs. Compared with the previous work, the proposed tests have lower time complexity for typical TCAMs; they can be used to test TCAMs with different comparator structures; and their time complexities are independent of the number of stuck-on faults. Also, they can cover delay faults in comparison circuits
机译:三元内容可寻址存储器(TCAM)以其快速查找操作在各种应用程序中发挥着重要作用。本文基于电气缺陷(例如两个电路节点之间的短路以及晶体管卡在开路和卡在的故障)提出了几种TCAM比较故障模型(即导致比较操作失败的故障)。还提出了两个用于检测比较故障的类似于三月的测试。第一个类似于三月的测试需要4N写操作,3N擦除操作和4N + 2B比较操作,以覆盖仅具有Hit输出的NtimesB位TCAM的100%目标比较错误。第二个类似三月的测试需要2N写操作,2N擦除操作和4N + 2B比较操作,以覆盖具有命中和优先地址编码器输出的NtimesB位TCAM的100%目标比较错误。与以前的工作相比,建议的测试对于典型的TCAM具有较低的时间复杂度;它们可用于测试具有不同比较器结构的TCAM;它们的时间复杂度与卡住故障的数量无关。此外,它们还可以覆盖比较电路中的延迟故障

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