Reduction of Parametric Failures in Sub-100-nm SRAM Array Using Body Bias

摘要

In this paper, we present a postsilicon-tuning technique to improve parametric yield of SRAM array using body bias (BB). First, we show that, although parametric failures in SRAM are due to local random intradie variations, the parametric failures increase at extreme interdie corners. Next, we show that proper BB can reduce different types of parametric failures. Finally, we show that adaptive application of BB to different dies, based on their interdie corners, reduces the total number of parametric failures in those dies. This helps to repair the faulty dies at different interdie corners, thereby improving SRAM yield. We show that postsilicon-tuning using BB can result in significant yield enhancement for SRAM (8%–25% in predictive 70-nm technology).