Impact of Thermal Boundary Resistance on the Performance and Scaling of Phase-Change Memory Device

摘要

The scaling of RESET current ( $I_{mathrm{ RESET}}$ ) used for reamorphization in phase-change memory (PCM) devices has been a challenging task to meet the energy-efficient programming. The faithful prediction of $I_{mathrm{ RESET}}$ of scaled-down devices demands realistic physical models in order to examine low-power, miniaturized device characteristics, and the potential of a highly scalable PCM technology. Therefore, modeling the intrinsic interface effects, thermal boundary resistance (TBR) at the GeSbTe (GST)–metal and GST–oxide interfaces, and electrical interface resistance (EIR) at the GST–metal interface of the nanoscale PCM device is necessary. In this paper, the impact of presence and absence of TBR and EIR on $I_{mathrm{ RESET}}$ in a mushroom-type PCM device is investigated, and their usefulness on scaling is predicted for diminished devices. Reductions in $I_{mathrm{ RESET}}$ , 32% in the case of 100 nm contact diameter (CD), 45% for the 40-nm CD and 73% for the 10-nm CD are achieved by taking into account of interface effects, and these results are validated with experimental results published elsewhere. The fitted model suggests $I_{mathrm{ RESET}}$ scales down linearly with CD and necessitates for the combined effects of TBR and EIR to successfully follow the isotropic scaling in mushroom-type devices. Hence, our simulation results demonstrate the significance of TBR and EIR for a better optimization and a reliable prediction of $I_{mathrm{ RESET}}$ for low-power programming of PCM devices toward enabling next generation high-speed, high-density nonvolatile memory applications.