Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability”

Xu Chuan; Kolluri Seshadri K.; Endo Kazhuhiko; Banerjee Kaustav

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Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability”

机译：校正“具有设计与可靠性的高级FinFET设备自加热模型的分析热模型”

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《IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems》 |2020年第1期|277-277|共1页
作者
Xu Chuan; Kolluri Seshadri K.; Endo Kazhuhiko; Banerjee Kaustav;
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Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA|Maxim Integrated Adv Res & Dev Beaverton OR 97005 USA;

Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA|Texas Instruments Inc Analog Technol Dev Santa Clara CA 95051 USA;

Natl Inst Adv Ind Sci & Technol AIST Cent 2 Tsukuba Ibaraki 3058568 Japan;

Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA;

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1. Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability [J] . Xu C., Kolluri S.K., Endo K., IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 2013,第7期

机译：先进FinFET器件中自加热的分析热模型，对设计和可靠性有影响
2. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits [J] . Ahn W., Shin S. H., Jiang C., Microelectronics & Reliability . 2018,第FEBa期

机译：受限几何结构（FinFET，NWFET和NSHFET）晶体管自热的集成建模及其对20 nm以下现代集成电路可靠性的影响
3. Analytical model for electrical and thermal transients of self-heating semiconductor devices [J] . Yu Zhu, Twynam J.K. IEEE Transactions on Microwave Theory and Techniques . 1998,第12期

机译：自热半导体器件的电和热瞬态分析模型
4. Analytical Thermal Model for Self-Heating Effects in Advanced FinFET Devices [C] . Zhihui Kang, Min Tang, Junfa Mao, IEEE International Conference on Integrated Circuits, Technologies and Applications . 2019

机译：先进FinFET器件中自热效应的解析热模型
5. An analytical and numerical model for design of non-uniformly powered silicon chips based on both thermal and device clock performance. [D] . Kaisare, Abhijit D. 2007

机译：基于热和器件时钟性能的非均匀供电硅芯片设计的解析和数值模型。
6. Advanced Energy Storage Devices: Basic Principles Analytical Methods and Rational Materials Design [O] . Jilei Liu, Jin Wang, Chaohe Xu, 2018

机译：先进的储能设备：基本原理分析方法和合理的材料设计
7. Analytical thermal stress modeling in physical design for reliability of micro and opto electronic systems : Role, attributes, challenges, results [O] . Suhir, E. 2006

机译：微观和光电系统物理设计中的分析热应力建模：角色，属性，挑战，结果

Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability”

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