首页> 外文期刊>IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems >Bit-Flipping Schemes Upon MLC Flash: Investigation, Implementation, and Evaluation
【24h】

Bit-Flipping Schemes Upon MLC Flash: Investigation, Implementation, and Evaluation

机译:MLC闪存上的位翻转方案:调查,实施和评估

获取原文
获取原文并翻译 | 示例

摘要

Multilevel cell (MLC) stales with lower threshold voltage endure less cell damage, lower retention error, and less current consumption. Based on these characteristics, it is opportunistic to strengthen MLC flash by introducing hit-flipping that reshapes state proportions on MLC pages. In this paper. we present a holistic study of bit-flipping schemes upon MLC flash in theory and practice. Specifically, we systematically investigate effective bit-flipping schemes and propose four new schemes on manipulating MLC states. We further design a generic implementation framework, named MLC bit-flipping framework, to implement bit-flipping schemes within solid state drives controllers, nicely integrating with existing system-level optimizations to further improve overall performance. The experimental results demonstrate that our proposed bit-flipping schemes standalone can reduce up to 28% cell damages and 53% retention errors. Our circuit-level simulation manifests that the bit-flipping latency on a page is less than 4 mu s when using 8K logic gates.
机译:具有较低阈值电压的多级电池(MLC)能够承受更少的电池损坏,更低的保持误差和更低的电流消耗。基于这些特征,通过引入可重塑MLC页面上的状态比例的点击翻转来增强MLC闪存是一个机会。在本文中。我们在理论和实践上对基于MLC闪存的位翻转方案进行了全面的研究。具体而言,我们系统地研究了有效的比特翻转方案,并提出了四种用于操纵MLC状态的新方案。我们进一步设计了一个通用的实现框架,称为MLC位翻转框架,以在固态驱动器控制器中实现位翻转方案,并与现有的系统级优化很好地集成在一起,以进一步提高整体性能。实验结果表明,我们单独提出的位翻转方案可以减少多达28%的单元损坏和53%的保留错误。我们的电路级仿真表明,使用8K逻辑门时,页面上的位翻转延迟小于4μs。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号