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Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory

机译:使用数据后补偿和预失真来容忍MLC nand闪存中的单元间干扰

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With the appealing storage-density advantage, multilevel-per-cell (MLC) nand Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC nand Flash memory is more subject to various device/circuit variability and noise, particularly as the industry is pushing the limit of technology scaling and a more aggressive use of MLC storage. Cell-to-cell interference has been well recognized as a major noise source responsible for raw-memory-storage reliability degradation. Leveraging the fact that cell-to-cell interference is a deterministic data-dependent process and can be mathematically described with a simple formula, we present two simple yet effective data-processing techniques that can well tolerate significant cell-to-cell interference at the system level. These two techniques essentially originate from two signal-processing techniques being widely used in digital communication systems to compensate communication-channel intersymbol interference. The effectiveness of these two techniques have been well demonstrated through computer simulations and analysis under an information theoretical framework, and the involved design tradeoffs are discussed in detail.
机译:凭借引人注目的存储密度优势,每个单元中存储多于1位的每单元多级(MLC)nand闪存现在在全球闪存市场上占据了主导地位。但是,由于固有的噪声容限较小,MLC nand Flash存储器更容易受到各种设备/电路可变性和噪声的影响,特别是在业界不断突破技术扩展极限和更积极地使用MLC存储的情况下。单元间干扰已被公认为是造成原始内存存储可靠性下降的主要噪声源。利用单元间干扰是确定性数据相关过程并可以用简单公式数学描述的事实,我们提出了两种简单而有效的数据处理技术,它们可以很好地容忍较大的单元间干扰。系统级别。这两种技术基本上源于在数字通信系统中广泛使用的两种信号处理技术,以补偿通信信道符号间干扰。在信息理论框架下,通过计算机仿真和分析已很好地证明了这两种技术的有效性,并详细讨论了涉及的设计折衷。

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