Method of programming multi-level cell NAND flash memory device and MLC NAND flash memory device

摘要

A method of programming a NAND flash memory device comprises: applying, by a programming voltage generating circuit, an initial programming voltage pulse to a predetermined page of a NAND flash memory; verifying, by the controller, a plurality of verify levels of the predetermined page, the plurality of verify levels being less than a first state verify voltage verifying a lowest program state of the predetermined page; determining, by the controller, a magnitude of a subsequent programming voltage pulse if one of the plurality of verify levels of the predetermined page passes the verify; and the programming voltage generation circuit applying a subsequent programming voltage pulse to the predetermined page.