首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >On-Chip Process and Temperature Monitor for Self-Adjusting Slew Rate Control of 2$,times,$ VDD Output Buffers
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On-Chip Process and Temperature Monitor for Self-Adjusting Slew Rate Control of 2$,times,$ VDD Output Buffers

机译:片上过程和温度监控器,用于2 $,$,$ VDD输出缓冲器的自调整摆率控制

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摘要

A novel process and temperature compensation design for 2$,times,$VDD output buffers is proposed, where the threshold voltages (Vth) of PMOSs and NMOSs varying with process and temperature deviation could be detected, respectively. A prototype 2$,times,$ VDD output buffer using the proposed compensation design is fabricated using a typical 0.18 $mu$ m CMOS process. By adjusting output currents, the slew rate of output signals could be compensated over 117%. The maximum data rate with compensation is 120 MHz in contrast with 95 MHz without compensation, which is measured on silicon with an equivalent probe capacitive load of 10 pF.
机译:提出了一种新的工艺和温度补偿设计,该方法针对2 <式>阈值电压(Vth)的VDD输出缓冲器,$,times,$ VDD输出缓冲器进行设计。可以检测到随工艺和温度偏差而变化的PMOS和NMOS。使用建议的补偿设计,使用典型的0.18 $,times,$ $ mu $ m CMOS工艺。通过调节输出电流,可以补偿输出信号的压摆率超过117%。有补偿的最大数据速率为120 MHz,无补偿的最大数据速率为95 MHz,这是在等效探头电容负载为10 pF的硅片上测得的。

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