Analysis of Switching Circuits Through Incorporation of a Generalized Diode Reverse Recovery Model Into State Plane Analysis

摘要

A new switching circuit analysis technique is proposed in which the reverse recovery and junction capacitance non-idealities of diode-based switches are incorporated into a state plane analysis of the circuit. Accurate state plane modeling of the reverse recovery process is based on the development of new generalizations of the classic charge control model. Using as an example a zero-voltage switching dc transformer possessing high sensitivity to diode characteristics, these generalizations are shown to be necessary to achieve accurate results across all operating modes. The proposed circuit analysis technique produces excellent modeling agreement with results measured on a hardware prototype of the dc transformer circuit.