Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

摘要

Minority carrier lifetimes in epitaxial 4H-SiC p+n junction diodes were mea- sured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t_s) as a function of initial ON-state forward current (I_F) and OFF-state reverse current (I_R) followed well-documented trends which have been observed for decades in silicon p+n rectifiers. Average minority carrier (hole) lifetimes (τ_p) calculated from plots of t_s vs I_R/I_F strongly decreased with decreasing device Area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/τ_p as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 mm2. The bulk minority carrier (hole) lifetime extracted from the 1/τ_p vs P/A plot is approximately 0.7 μs, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombi- nation effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.