FABRICATION OF A FAST- SWITCHING THYRISTOR BY PROTON IRRADIATION- A SMART MINORITY CARRIER LIFETIME CONTROL METHOD

摘要

The present invention relates to a method of manufacturing a power semiconductor device, and in particular, proceeds to the proton beam irradiation for the carrier lifetime control before the heat treatment process in the state in which the metallization pattern process for forming the cathode of the power semiconductor device, the magnetic lens irradiation Setting a quantization acceleration energy irradiated through the system to 4.7 MeV; A second step of causing the accelerated proton beam according to the quantization acceleration energy level set in the first step to enter the cathode surface of the semiconductor device perpendicularly; And a third step of performing heat treatment for a predetermined time in a predetermined heat environment when the accelerated proton beam is irradiated through the second step. A small number for manufacturing high voltage / high current semiconductor-high speed switch elements according to a proton irradiation method Providing a carrier life control method, the proton acceleration energy of 4.7 MeV shows the best on-state voltage drop V _TM turn-off time t _q trade-off relationship. V _TM, while showing only a deterioration of 6.9% compared with before the irradiation t _q has the effect that significant improvements in the tank prior to 80㎲ 15㎲.