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A 300-V LDMOS Analog-Multiplexed Driver for MEMS Devices

机译:用于MEMS器件的300V LDMOS模拟多路复用驱动器

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The paper presents a high-voltage integrated-circuit driver capable of producing analog voltages up to 300 V, using Dalsa's 0.8- HV CMOS/DMOS process, suitable for MEMS and medical systems. The IC driver includes a HV operational amplifier (op-amp) with a class-B output stage, and HV analog switches with improved off-isolation performance. In contrast to previous frequency compensation schemes, where only one dominant pole occurs below the unity-gain bandwidth, the HV op-amp employs a novel frequency compensation topology with three poles and two zeros located within the unity-gain bandwidth, and is capable of driving large capacitive loads from 100 pF to 10 nF. Theoretical analysis of off-isolation of the HV analog switches is also reported and confirms the improvement in off-isolation performance.
机译:本文提出了一种高压集成电路驱动器,该驱动器能够使用Dalsa的0.8-HV CMOS / DMOS工艺产生高达300 V的模拟电压,适用于MEMS和医疗系统。该IC驱动器包括具有B类输出级的HV运算放大器(op-amp),以及具有改善的关断隔离性能的HV模拟开关。与以前的频率补偿方案相反,在该频率补偿方案中,只有一个主导极点出现在单位增益带宽以下,而HV运算放大器采用了新颖的频率补偿拓扑结构,其中三个极点和两个零位于单位增益带宽内,并且能够驱动100 pF至10 nF的大容性负载。还报道了HV模拟开关的断开隔离的理论分析,并证实了断开隔离性能的提高。

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