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A 1-MHz Relaxation Oscillator Core Employing a Self-Compensating Chopped Comparator Pair

机译:一个1-MHz松弛振荡器芯,采用自补货切碎的比较器对

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An improved relaxation oscillator core is designed and fabricated in 0.35-mu m CMOS process, occupying the area of 0.032 mm(2) and consuming around 160 mu W while running at 1 MHz. Employing a self-compensating chopped comparator structure, the designed oscillator exhibits a significant improvement in the frequency stability and control linearity, at the same time retaining a fast start-up and having a minimal overhead in the power consumption and area. Measured on 8 test chips, the frequency variation against temperature is +/- 0.26% in the temperature range from -40 to 125 degrees C, and the line sensitivity is +/- 0.08 %/V with the supply voltage changing from 3.0 to 4.5 V. The typical distortion parameters of the control characteristic are HD2 = -61.7 dB and HD3 = -93.2 dB at Delta f(osc) = 500 kHz. The measured jitter and phase noise at 10 kHz carrier offset are 235 ppm and -92 dBc/Hz, respectively, while the Allan deviation floor is 15 ppm.
机译:改进的弛豫振荡器芯设计并制造在0.35 - Mu M CMOS工艺中,占据0.032mm(2)的面积,并在1 MHz运行时耗尽约160亩。采用自补偿切碎的比较器结构,设计的振荡器在频率稳定性和控制线性方面具有显着改善,同时保持快速启动并在功耗和区域中具有最小的开销。在8个测试芯片上测量,频率变化在-40至125摄氏度的温度范围内+/- 0.26%,线灵敏度为+/- 0.08%/ v,电源电压从3.0到4.5变化V.控制特性的典型失真参数是ΔF(OSC)= 500kHz的HD2 = -61.7dB和HD3 = -93.2dB。在10kHz载波偏移时的测量抖动和相位噪声分别为235ppm和-92dBc / Hz,而Allan偏差底部是15ppm。

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