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A 1-MHz Relaxation Oscillator Core Employing a Self-Compensating Chopped Comparator Pair

机译:采用自补偿斩波比较器对的1MHz弛豫振荡器内核

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An improved relaxation oscillator core is designed and fabricated in 0.35-mu m CMOS process, occupying the area of 0.032 mm(2) and consuming around 160 mu W while running at 1 MHz. Employing a self-compensating chopped comparator structure, the designed oscillator exhibits a significant improvement in the frequency stability and control linearity, at the same time retaining a fast start-up and having a minimal overhead in the power consumption and area. Measured on 8 test chips, the frequency variation against temperature is +/- 0.26% in the temperature range from -40 to 125 degrees C, and the line sensitivity is +/- 0.08 %/V with the supply voltage changing from 3.0 to 4.5 V. The typical distortion parameters of the control characteristic are HD2 = -61.7 dB and HD3 = -93.2 dB at Delta f(osc) = 500 kHz. The measured jitter and phase noise at 10 kHz carrier offset are 235 ppm and -92 dBc/Hz, respectively, while the Allan deviation floor is 15 ppm.
机译:一种改进的弛张振荡器核是在0.35微米的CMOS工艺中设计和制造的,占用的面积为0.032毫米(2),在1 MHz的频率下消耗约160瓦的功率。采用自补偿斩波比较器结构,设计的振荡器在频率稳定性和控制线性方面显示出显着改善,同时保持了快速启动并在功耗和面积上具有最小的开销。在8个测试芯片上进行测量,在-40至125摄氏度的温度范围内,温度随频率的变化为+/- 0.26%,电源电压从3.0变为4.5时,线路灵敏度为+/- 0.08%/ V。 V.在Delta f(osc)= 500 kHz时,控制特性的典型失真参数为HD2 = -61.7 dB和HD3 = -93.2 dB。在10 kHz载波偏移下测得的抖动和相位噪声分别为235 ppm和-92 dBc / Hz,而Allan偏差底限为15 ppm。

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