首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >A 0.12–0.4 V, Versatile 3-Transistor CMOS Voltage Reference for Ultra-Low Power Systems
【24h】

A 0.12–0.4 V, Versatile 3-Transistor CMOS Voltage Reference for Ultra-Low Power Systems

机译:适用于超低功耗系统的0.12–0.4 V通用3晶体管CMOS电压基准

获取原文
获取原文并翻译 | 示例

摘要

In this paper, we propose an ultra-low power compact 3-transistor voltage reference capable of operating at ultra-low supply voltages. The proposed circuit is based on the self-cascode MOSFET (SCM), which provides a reference voltage proportional to the threshold voltage (VT) difference of the two NMOS transistors that compose it. Reverse short-channel and narrow-width effects are explored to obtain such VT difference while using the same type of transistor. Ultra-low power operation and low line sensitivity is achieved by biasing the SCM with a zero-VT (native) transistor, also leading to an area efficient design. To show its versatility, three versions of the proposed circuit were fabricated in a standard 0.13-μm CMOS process. Measurement performed over five samples showed an average temperature coefficient of 150-1500 ppm/°C. Minimum supply voltages of 0.12-0.4 V was observed while providing reference voltages around tens of mV. The proposed circuits consume 0.33-50 pW at room temperature and minimum supply voltage. The occupied area for any version is less than 0.0012 mm2.
机译:在本文中,我们提出了一种能够在超低电源电压下工作的超低功耗紧凑型三晶体管参考电压。所提出的电路基于自级联MOSFET(SCM),它提供了与构成它的两个NMOS晶体管的阈值电压(VT)差成比例的参考电压。在使用相同类型的晶体管时,探索了反向短沟道效应和窄宽度效应以获得这种VT差异。通过使用零VT(本机)晶体管对SCM进行偏置,可以实现超低功耗工作和低线路灵敏度,这也导致了面积高效的设计。为了展示其多功能性,在标准的0.13μmCMOS工艺中制造了三种版本的拟议电路。对五个样品进行的测量显示平均温度系数为150-1500 ppm /°C。观察到的最小电源电压为0.12-0.4 V,同时提供约数十mV的参考电压。建议的电路在室温和最小电源电压下消耗0.33-50 pW。任何版本的占用面积均小于0.0012 mm2。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号