机译:适用于超低功耗系统的0.12–0.4 V通用3晶体管CMOS电压基准
Graduate Program in Microelectronics, Federal University of Rio Grande do Sul, Porto Alegre, RS, Brazil;
IMS Laboratory, Université de Bordeaux, Bordeaux, France;
Graduate Program in Microelectronics, Federal University of Rio Grande do Sul, Porto Alegre, RS, Brazil;
Graduate Program in Microelectronics, Federal University of Rio Grande do Sul, Porto Alegre, RS, Brazil;
Threshold voltage; MOSFET; Low-power electronics; Oscillators; Temperature measurement;
机译:超低功率高温和辐射硬互补金属氧化物半导体(CMOS)绝缘体上硅(SOI)电压基准
机译:多功能CMOS电流输送机,用于低压电源的数字VLSI系统
机译:通用的微功耗电压基准提供电阻可编程的输出,范围为0.4V至18V-设计说明351
机译:具有0.02%/ V的线灵敏度的6晶体管超低功耗CMOS电压基准
机译:基于阈值电压差架构的CMOS技术的低于1V的电源参考电压。
机译:超低功率高温和辐射硬互补金属氧化物半导体(CMOS)绝缘体上硅(SOI)电压基准
机译:超低功耗高温和辐射硬互补金属氧化物半导体(CmOs)绝缘体上硅(sOI)电压基准