InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxy

摘要

An InGaAs/InGaAlAs multiple-quantum-well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE). The laser has InP cladding layers and InGaAsP guiding layers, and the active layer is composed of an InGaAs/InGaAlAs MQW layer. Electrons are injected into the MQW active layer by tunneling through the barriers. The threshold current of the InGaAs/InAlAs buried-heterostructure (BH)-MQW lasers was as low as 9.6 mA. The relaxation oscillation frequency of the InGaAs/InAlAs MQW lasers was found to be larger than that of the InGaAs/InGaAsP MQW lasers with the same structure.