Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

摘要

The authors have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelengths as long as 2208 nm using solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm/sup 2/ at 20/spl deg/C and characteristic temperature of 53 K have been achieved.