Strain-compensated 1.3-/spl mu/m AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers

摘要

Strain-compensated 1.3-/spl mu/m AlGaInAs graded-index separate confinement heterostructure (GRINSCH) lasers with multiquantum barrier (MQB) at both the nand p-cladding layers are comprehensively studied and compared with the conventional GRINSCH lasers. It is found that the lasers with MQBs exhibit lower threshold current, higher maximum output power and better temperature characteristics because of the enhanced barrier height for carrier leakage. The characteristic temperature is improved as much as 10 K and the vertical far-field angle is also reduced from 38/spl deg/ to 32/spl deg/ as compared to the conventional counterpart.