Temperature-dependent characteristics of 1.3-/spl mu/m AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

摘要

Strain-compensated 1.3-/spl mu/m AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25/spl deg/C to 75/spl deg/C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.