Uncooled Performance of 10-Gb/s Laser Modules With InGaAlAs-InP and InGaAsP-InP MQW Electroabsorption Modulators Integrated With Semiconductor Amplifiers

摘要

Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAS-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80 deg C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence.