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Electroabsorption modulators monolithically integrated with semiconductor optical amplifiers for zero insertion loss utilizing InGaAs/InGaAlAs MQW material

机译：利用InGaAs / InGaAlAs MQW材料与半导体光放大器单片集成的电吸收调制器可实现零插入损耗

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Nearly zero insertion loss was obtained in 200-/spl mu/m long electroabsorption modulators by integrating 400-/spl mu/m. long semiconductor optical amplifiers with 120/spl sim/150-mA driving current. InGaAs/InGaAlAs MQW material was for the first time used in the integration.

机译：通过积分400- / spl mu / m，在200- / spl mu / m长的电吸收调制器中获得了几乎为零的插入损耗。长半导体光放大器，具有120 / spl sim / 150-mA驱动电流。 InGaAs / InGaAlAs MQW材料是首次在集成中使用。

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《》|2001年|P.WDD60-WD1-3|共1页
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Dan Zhou; Yixi Lu; Jianhua Wang;
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中图分类无线电电子学、电信技术;
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专利

1. Uncooled Performance of 10-Gb/s Laser Modules With InGaAlAs-InP and InGaAsP-InP MQW Electroabsorption Modulators Integrated With Semiconductor Amplifiers [J] . N. C. Frateschi, J. Zhang, R. Jambunathan, IEEE Photonics Technology Letters . 2005,第7期

机译：集成了InGaAlAs-InP和InGaAsP-InP MQW电吸收调制器且集成了半导体放大器的10 Gb / s激光模块的非制冷性能
2. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters [J] . Lianping Hou, Hongliang Zhu, Fan Zhou, Journal of Crystal Growth . 2006,第1期

机译：与点尺寸转换器单片集成的电吸收调制半导体光放大器
3. Lossless Electroabsorption Modulator Monolithically Integrated With a Semiconductor Optical Amplifier and Dual-Waveguide Spot-Size Converters [J] . Lianping Hou, Hongliang Zhu, Fan Zhou, IEEE Photonics Technology Letters . 2005,第8期

机译：与半导体光放大器和双波导点尺寸转换器单片集成的无损电吸收调制器
4. Electroabsorption modulators monolithically integrated with semiconductor optical amplifiers for zero insertion loss utilizing InGaAs/InGaAlAs MQW material [C] . Dan Zhou, Yixi Lu, Jianhua Wang Optical fiber communication conference and exhibit;OFC . 2001

机译：利用InGaAs / InGaAlAs MQW材料与半导体光放大器单片集成的电吸收调制器可实现零插入损耗
5. Actively mode-locked monolithic MQW laser diode integrated with an EA modulator. [D] . Lee, Joong Hee. 1999

机译：集成了EA调制器的主动锁模单片MQW激光二极管。
6. Ultra low-loss isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires [O] . R. Paniagua-Domínguez, D. R. Abujetas, J. A. Sánchez-Gil -1

机译：基于混合金属-半导体纳米线的超低损耗各向同性光学负折射率超材料
7. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters [O] . Hou LP, Zhu HL, Zhou F, 2006

机译：与点尺寸转换器单片集成的电吸收调制半导体光放大器
8. Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator [R] . Wu, C., Keo, S., Yao, S., 1998

机译：采用相同层方法的单片集成InGaasp / Inp激光器/调制器，用于光电子振荡器

Electroabsorption modulators monolithically integrated with semiconductor optical amplifiers for zero insertion loss utilizing InGaAs/InGaAlAs MQW material

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