Electroabsorption modulators monolithically integrated with semiconductor optical amplifiers for zero insertion loss utilizing InGaAs/InGaAlAs MQW material

摘要

Nearly zero insertion loss was obtained in 200μm long electroabsorption modulators by integrating 400-μm long semiconductor optical amplifiers with 120 ～150-mA driving current. InGaAs/InGaAlAs MQW material was for the first time used in the integration.